Semiconductor laser

Details Semiconductor laser Semiconductor laser

1980-12-19

1983-03-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, 372 50, H01S 319

Patent

active

043778658

ABSTRACT:
On an n-type semiconductor substrate having a ridge part of stripe-shaped pattern, the following layers are formed by liquid phase sequential epitaxial growth: an undoped active layer; a p-type clad layer; and an n-type isolation layer. Thereafter, a Cd impurity is diffused in the isolation layer in a stripe-shaped pattern at the position above the ridge part, thereby forming a p+-type conduction region in the central part of the isolation layer. By forming the stripe-shaped ridge part on the substrate overriding the active layer, the injected current is effectively confined to the lasing region which is the thinner part of the active layer and is on the ridge part. Therefore the threshold current is decreased. Accordingly, the light lased in the active layer is effectively confined in a stripe-shaped lasing region thereof, and a stable transverse mode of lasing is obtainable.

REFERENCES:
patent: 4215319 (1980-07-01), Botez
patent: 4217561 (1980-08-01), Scifres et al.
patent: 4280858 (1981-07-01), Opdorp et al.
patent: 4287485 (1981-09-01), Hsieh

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