Semiconductor laser

Details Semiconductor laser Semiconductor laser

1995-07-31

1996-10-29

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

055703860

ABSTRACT:
The disclosed unipolar quantum cascade (QC) laser comprises a multiplicity of essentially identical active regions, with adjacent active regions separated by a superlattice carrier injection/relaxation region. A given active region contains a single quantum well with at least two electron states. Lasing is obtained without global intersubband population inversion. Instead, there is believed to exist local population inversion in a small region of k-space near k=0, corresponding to electron energies approximately within an optical phonon energy (.about.35 meV) from the bottom of the lower subband. A novel design feature that can be used to improve the thermal characteristics of substantially any QC laser is also disclosed.

REFERENCES:
patent: 5400352 (1995-03-01), Lebby et al.
patent: 5457709 (1995-10-01), Capasso et al.
"Possibility of the Amplification of Electromagnetic Waves in a Semiconductor with a Superlattice", by R. F. Kazarinov et al., Soviet Physics-Semiconductors, vol. 5, No. 4, Oct., 1971, pp. 707-709.
"Evaluation of the Feasibility of a Far-infrared Laser Based on Intersubband Transitions in GaAs Quantum Wells", by S. I. Borenstain et al., Applied Physics Letters, vol. 55 (7), 14 Aug. 1989, pp. 654-656.
"Feasibility of Far-infrared Laser Using Multiple Semiconductor Quantum Wells", by Q. Hu, Applied Physics Letters, vol. 59 (23), 2 Dec. 1991, pp. 2923-2925.
"Possibility of Infrared Laser in a Resonant Tunneling Structure", by A. Kastalsky et al., Applied Physics Letters, vol. 59 (21), 18 Nov. 1991, pp. 2636-2639.
"Carrier Transport and Intersubband Population Inversion in Coupled Quantum Wells", by W. M. Yee et al., Applied Physics Letters, vol. 63 (8), 23 Aug. 1993, pp 1080-1091.
"Periodic Negative Conductance by Sequential Resonant Tunneling Through an Expanding High-field Superlattice Domain", by K. K. Choi et al., Physical Review B, vol. 35, No. 8, 15 Mar. 1987-I, pp. 4172-4175.
"Band Nonparabolicity Effects in Semiconductor Quantum Wells", by D. F. Nelson et al., Physical Review B, vol. 35, No. 14, 15 May 1987, pp. 7770-7773.
"Quantum-well Intersub-band Electroluminescent Diode at .lambda.=5.mu.m", by J. Faist, Electronics Letters, 9th Dec. 1993, vol. 29, No. 25, pp. 2230-2231.
"Phonon Limited Intersubband Lifetimes and Linewidths in a Two-dimensional Electron Gas", by J. Faist et al., Applied Physics Letters, vol. 64 (7), 14 Feb. 1994, pp. 872-874.
"Pseudo-quaternary GaInAsP Semiconductors: a New Ga.sub.0.47 In.sub.0.53 As/InP Graded Gap Superlattice and its Applications to Avalanche Photodiodes", by F. Capasso et al., Applied Physics Letters, vol. 45 (11), 1 Dec. 1984, pp. 1193-1195.
"Staircase Solid-State Photomultipliers and Avalanche Photodiodes with Enhanced Ionization Rates Ratio", by F. Capasso et al., IEEE Transactions on Electron Devices, vol. ED-30, No. 4, Apr. 1983, pp. 381-390.
"Mid-infrared Field-tunable Intersubband Electroluminescence at Room Temperature by Photon-assisted Tunneling in Coupled-quantum Wells", by J. Faist et al., Applied Physics Letters, vol. 64 (9), 28 Feb. 1994, pp. 1144-1146.

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