Semiconductor laser

Details Semiconductor laser Semiconductor laser

1980-01-18

1982-03-23

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

043215564

ABSTRACT:
A semiconductor laser is provided with a semiconductor substrate having a longitudinal groove formed therein. A first cladding layer is formed on the substrate by an epitaxial process which partially fills in the groove. A waveguide layer is provided atop the first cladding layer, the waveguide layer having either a plano-convex or concave-convex configuration and being thicker at its central region than at its outward edges. An active layer and a second cladding layer are laid over the waveguide layer, whereby the first and second cladding layers serve to confine the laser light within the waveguide layer.

REFERENCES:
patent: 3978428 (1976-08-01), Burnham et al.
Burnham et al., "Nonplanar Large Optical Cavity Ga,As/GaAlAs Semiconductor Laser", APL, vol. 35, No. 10, Nov. 15, 1979, pp. 734-736.

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