Semiconductor laser

Details Semiconductor laser Semiconductor laser

1993-04-07

1994-01-04

Kunemund, Robert

Fishing, trapping, and vermin destroying

437150, 437167, 437987, 148DIG35, 372 45, 372 46, H01L 9190

Patent

active

052759695

ABSTRACT:
A method for diffusing a P type impurity into a semiconductor includes the steps of selectively implanting ions of a first P type impurity into a semiconductor substrate and thermally diffusing a second P type impurity into the semiconductor substrate containing at least a region where the first P type impurity ions are implanted. Therefore, the diffusion speed of the P type impurity is increased in the ion implantation region, whereby the P type impurity diffusion region which almost corresponds to the ion implantation region can be obtained and P type diffusion can be performed in high concentration with high precision.

REFERENCES:
patent: 4517674 (1985-05-01), Liu et al.
patent: 4960730 (1990-10-01), Kakimoto
patent: 4980313 (1990-12-01), Takahashi
patent: 5108949 (1992-04-01), Takahashi
patent: 5116769 (1992-05-01), Seiwa

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