Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-08-28

1999-09-14

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

059533579

ABSTRACT:
An AlGaInP-based buried-ridge semiconductor laser includes an n-type GaAs current blocking layer 8 buried in opposite sides of a ridge stripe portion 7 which is made of an upper-layer portion of a p-type AlGaInP cladding layer 4, p-type GaInP intermediate layer 5 and p-type GaAs contact layer 6. The ridge stripe portion 7 includes tapered regions 7a having the length of L1 at cavity-lengthwise opposite ends of the ridge stripe portion 7.

REFERENCES:
patent: 5136601 (1992-08-01), Kajimura et al.
patent: 5235609 (1993-08-01), Uchida et al.
patent: 5353298 (1994-10-01), Makuta
patent: 5687272 (1997-11-01), Vinchant et al.
patent: 5701322 (1997-12-01), Nagai

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