Semiconductor laser

Oscillators – Molecular or particle resonant type

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H01S 319

Patent

active

042963877

ABSTRACT:
In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape,

REFERENCES:
patent: 4185256 (1980-01-01), Scifres et al.
D. Botez et al., "Constricted Double-Heterostructure (AlGa)As Diode Lasers", Appl. Phys. Lett. 32(4), Feb. 15, 1978, pp. 261-263.

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