Semiconductor laser

Details Semiconductor laser Semiconductor laser

1980-08-15

1982-11-16

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

043597750

ABSTRACT:
A semi-conductor laser comprising a crystal having a sequence of layers forming a heterostructure diode and which includes a laser active zone interposed between a pair of semiconductor layers. Each of these semi-conductor layers has a band gap which is greater than that of the layers within the laser active zone. The laser active zone includes a first semiconductor layer having a given band gap, and at least second and third semiconductor layers each having a band gap which is greater than that of the first layer. The first layer is contiguous with and interposed between semiconductor layers each having a band gap which is greater than that of said first layer and forms a pn-junction with one of those contiguous layers. A strip-shaped region of a uniform conductivity type diffused from the surface of the crystal penetrates into at least one layer of the laser active zone but does not penetrate into the first layer.

REFERENCES:
patent: 4233090 (1980-11-01), Hawrylo et al.
patent: 4278949 (1981-07-01), Marschall et al.
Casey et al., "Ga As-Al.sub.x Ga.sub.l-x As Heterostructure Laser with Separate Optical and Carrier Confinement, " J. Appl. Phys., vol. 45, No. 1, Jan. 1974, pp. 322-333.

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