Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-11-10

1999-04-06

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 43, 372 39, 372 44, 257192, H01S 319

Patent

active

058927859

ABSTRACT:
A semiconductor laser includes a lower cladding layer, an active layer, a first upper cladding layer, an etch-stopping layer, a second upper cladding layer, and a contact layer successively laminated on a substrate, a ridge waveguide formed by selectively etching the second upper cladding layer and the contact layer with the use of a stripe-like insulating film as a mask to form a ridge, an AlAs oxide layer on the substrate and a second electrode on the substrate. Incorrect positioning does not occur between the ridge waveguide and a first electrode, reliability is improved, and the distribution of effective refractive index transverse to the resonation of the laser is reduced. A detailed method of fabricating this semiconductor laser is also provided.

REFERENCES:
patent: 5309465 (1994-05-01), Antreasyan et al.
patent: 5478775 (1995-12-01), Fujii
patent: 5550393 (1996-08-01), Nishimura

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