Semiconductor laser

Details Semiconductor laser Semiconductor laser

1992-04-22

1993-10-19

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, H01S 319

Patent

active

052552802

ABSTRACT:
A semiconductor laser has a substrate having a strip raised region on a principal surface thereof which comprises a {100} face, the strip raised region extending along a <011> axis. First lower and second upper cladding layers are disposed on the substrate, and an active layer is interposed between the first and second cladding layers. The first and second cladding layers and the active layers are divided into sections in a cross-sectionally triangular body and sections on opposite sides of the cross-sectionally triangular body, by two slant surfaces extending from opposite edges of the raised region and intersecting with each other above the raised region. The semiconductor laser also includes a current blocking layer disposed on each side of the cross-sectionally triangular body, a third cladding layer covering the current blocking layer and the cross-sectionally triangular body, and a cap layer disposed on the third cladding layer. A supplied current flows substantially through the active layer in the cross-sectionally triangular body, enabling the active layer to emit light.

REFERENCES:
patent: 5111469 (1992-05-01), Narui et al.

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