Semiconductor laser

Details Semiconductor laser Semiconductor laser

1981-09-16

1983-10-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 61, H01S 319

Patent

active

044109946

ABSTRACT:
A semiconductor laser having a multi-layer film which is inclusive of an active layer and formed on an InP substrate, in which at least one layer adjacent to the active layer is formed of a material which is a composition having a larger band gap than InP and whose component ratio is so selected as to match with the lattice constant of InP, thereby to ensure that minority carriers injected into the active layer efficiently contribute to laser operation. The material has a composition including at least three elements in addition to InP.

REFERENCES:
patent: 4287485 (1981-09-01), Hsieh
H. Nagai et al., "InP-GaxIn.sub.1-x AsyP.sub.1-y Double-Heterostructure for 1.5 .mu.m Wavelength", Appl. Phys. Lett. 32(4), Feb. 15, 1978, pp. 234-236.
R. E. Nahory et al., "Threshold Characteristics and Extended Wavelength Operation of GaAs.sub.1-x' Sbx'/AlyGa.sub.1-y As.sub.1-x Sb.sub.x Double-Heterostructure Lasers", Journal of Applied Physics, vol. 48, No. 9, Sep. 1977, pp. 3988-3990.

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