Coherent light generators – Particular active media – Semiconductor
Patent
1996-11-12
1998-09-08
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
H01S 319
Patent
active
058056297
ABSTRACT:
A semiconductor device includes a p type InP substrate with a (001) surface; a mesa structure formed by dry etching, extending along a <110> direction, including semiconductor layers, having (110) side surfaces, and a height H.sub.m ; and mesa burying layers including a p type InP burying layer on the (110) side surfaces and the (001) surface, the p type InP burying layer having a thickness D.sub.p, and an n type InP burying layer on the p type InP burying layer. An angle between a (111)B surface and (001) surface is .theta..sub.111, the growth rates on the (110) side surfaces and on the (001) surface are respectively R.sub.g (110) and R.sub.g (001), an angle .theta. is tan .theta.=R.sub.g (110)/R.sub.g (001) and the critical thickness D.sub.n of the n type InP burying layer on the (001) surface when the n type InP burying layer is not grown on the (111)B surface is ##EQU1## The n type InP burying layer has a thickness D.ltoreq.D.sub.n. The leakage current path width is narrowed and contact of the n type InP burying layer and an uppermost layer of the semiconductor layers is avoided. Consequently, a semiconductor device having reduced leakage current and superior device characteristics is obtained.
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Kimura Tatsuya
Shiba Tetsuo
Shibata Kimitaka
Suzuki Daisuke
Takemi Masayoshi
Davie James W.
Mitsubishi Denki & Kabushiki Kaisha
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