Semiconductor laser

Details Semiconductor laser Semiconductor laser

1996-10-23

1998-09-08

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 48, H01S 319

Patent

active

058056289

ABSTRACT:
A semiconductor laser device includes a semiconductor substrate of a first conductivity type; opposed light emitting facets; a double heterojunction structure disposed on the semiconductor substrate and including an optical waveguide that extends between the facets and comprises a light emitting region and a lens region, the lens region being between the light emitting region and one of the facets, the double heterojunction structure including a plurality of AlGaAs series compound semiconductor layers which are thicker in the light emitting region than in the lens region; and a current blocking structure disposed on both sides of the double heterojunction structure and including a lower AlGaAs series compound semiconductor layer of the first conductivity type, an intermediate AlGaAs series compound semiconductor layer of a second conductivity type, opposite the first conductivity type, and an upper AlGaAs series compound semiconductor layer of the first conductivity type. Therefore, a reactive current that does not contribute to laser oscillation is prevented from flowing through the current blocking structure.

REFERENCES:
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patent: 4815084 (1989-03-01), Scifres et al.
patent: 5070510 (1991-12-01), Konushi et al.
patent: 5390205 (1995-02-01), Mori et al.
patent: 5428227 (1995-06-01), Satoh
patent: 5661743 (1997-08-01), Nagai
Soda et al., "Tapered Thickness Waveguide Integrated BH MOW Lasers", Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, Osaka, Japan 1995, pp. 425-427.

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