Coherent light generators – Particular active media – Semiconductor
Patent
1992-11-30
1994-09-27
Gonzalez, Frank
Coherent light generators
Particular active media
Semiconductor
H01S 319
Patent
active
053512545
ABSTRACT:
In order to provide a semiconductor laser with high differential gain and low nonlinear gain parameter and is capable of modulation at high speed, a p-type impurity is doped in a multi-quantum well barrier layer 151 which forms an active layer 15, and a spacer layer 152 undoped with impurity and thickness in the range of 2 to 4 nm is inserted between the barrier layer and a well layer 153. By setting the thickness of the spacer layer 152 in the above-mentioned range, the wave function of the electron leaks to the barrier layer 151 beyond the spacer layer 152, whereas the wave function of the hole is localized in the well layer 153 and does not leak to the barrier layer 151. Therefore, electrons alone are scattered and their intraband relaxation time is reduced. Since the intra-band relaxation time of the hole does not change, the nonlinear gain parameter alone is reduced while maintaining the differential gain at a high value, and the maximum modulation frequency can be increased.
REFERENCES:
patent: 5008717 (1991-04-01), Bar-Joseph et al.
patent: 5023198 (1991-06-01), Strege
Kazuhisa Uomi et al., "Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers.", Japanese Journal of Applied Physics, vol. 29, No. 1, Jan., 1990, pp. 88-94.
K. Uomi et al., "Ultrahigh relaxation oscillation . . . GaAs/GaAlAs multiple quantum well lasers", Appl. Phys. Lett., 51 (2), 13 Jul. 1987, pp. 78-80.
Gonzalez Frank
NEC Corporation
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