Semiconductor laser

Details Semiconductor laser Semiconductor laser

1993-05-10

1995-02-14

Epps, Georgia Y

Coherent light generators

Particular active media

Semiconductor

372 48, H01S 319

Patent

active

053902050

ABSTRACT:
A semiconductor laser includes a first conductivity type semiconductor substrate; a double-heterojunction structure including a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer successively disposed on the semiconductor substrate; two parallel stripe grooves forming the double-heterojunction structure in a mesa shape; a first conductivity type mesa embedding layer, a second conductivity type current blocking layer, and a first conductivity type current blocking layer successively disposed on the semiconductor substrate and contacting opposite sides of the mesa; and impurity doped regions formed by adding an impurity through the surface of the first conductivity type current blocking layer. The impurity doped regions electrically separate an upper part of the mesa from the second conductivity type current blocking layer at opposite sides of the mesa. Since the second conductivity type current blocking layer is not in contact with the mesa structure, no leakage current path is formed in the laser structure.

REFERENCES:
patent: 4730329 (1988-03-01), Yoshida et al.
patent: 4731791 (1988-03-01), Wilson
patent: 4779282 (1988-10-01), Ng
patent: 4799227 (1989-01-01), Kaneiwa et al.
patent: 4972238 (1990-11-01), Tanaka
patent: 4984244 (1991-01-01), Yamamoto et al.

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