Semiconductor laser

Details Semiconductor laser Semiconductor laser

1989-11-17

1991-07-02

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 357 17, H01S 319

Patent

active

050291750

ABSTRACT:
In a semiconductor laser, an AlGaInP cladding layer of one conductive type, an active layer, and an AlGaInP cladding layer of other conductive type greater in thickness in stripes are formed on a GaAs substrate, and an insulating film, AlGaInP or amorphous layer smaller in refractive index than the AlGaInP cladding layer are formed at both sides of the stripes, wherein the light can be confined and guided also in the direction parallel to the active layer, and the light can be index-guided both in the direction parallel to the active layer and in the direction vertical thereto, so that a laser having an extremely smaller astigmatism may be presented. In addition, the current blocking layer disposed at the outer side of the insulating film, AlGaInP or amorphous layer is high in thermal conductivity, and the heat generated in the vicinity of the active layer may be efficiently released.

REFERENCES:
patent: 4602371 (1986-07-01), Kawano et al.
patent: 4792958 (1988-12-01), Ohba et al.

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