Semiconductor laser

Coherent light generators – Particular active media – Semiconductor

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372 50, H01S 319

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active

053655362

ABSTRACT:
A semiconductor laser for radiating a laser beam when current flows in the forward direction includes a first laser structure, a tunnel diode structure and a second laser structure in sequence, the forward direction of the first laser structure and the second laser structure being coincident with the forward direction of the semiconductor laser, the forward direction of the tunnel diode structure being opposite to the forward direction of the semiconductor laser.

REFERENCES:
patent: 3514715 (1970-05-01), Kosonocky
patent: 5016252 (1991-05-01), Hamada et al.
patent: 5212706 (1993-05-01), Jain
J. P. Van Der Ziel et al., "Multilayer GaAs Lasers Separated by Tunnel Junctions, Applied Physics Letters", Sep. 1992, pp. 499-501.
Transient Analysis of p-n-p-n Optoelectronic Devices, IEEE J.Q.E. QE-10 pp. 567-569, Aug. 1992.
CMOS-Compatible Lateral Bipolar Transistor for BiCMOS Technology: Part II-Esperimental Results IEEE T.E.D. vol. 39 No. 8, Aug. 1992, pp. 1858-1864.

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