Semiconductor laser

Details Semiconductor laser Semiconductor laser

1989-12-06

1991-06-25

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

050273639

ABSTRACT:
A planar type semiconductor laser having p-side and n-side electrodes on the same side of the substrate. The substrate carries a number of layers including lower and upper cladding layers sandwiching an active layer. Both of the cladding layers are of n-type material. A pair of p-type diffusion regions serve to define the width of an undiordered active stripe in the active layer. A first relatively deep diffusion region penetrates both cladding layers and extends into the substrate. A second shallower diffusion region spaced, from the first, penetrates only to the lower cladding layer and leaves a channel below the diffusion front in the lower cladding layer for conduction of carriers. The distance between the p-type diffusion regions defines the width of the active layer. An n-side electrode is formed on the upper surface of the semiconductor device and in electrical contact with the n-type cladding layers. A p-side electrode is formed on the upper surface of the semiconductor layer in electrical contact with the first p-type diffusion region.

REFERENCES:
patent: 4873696 (1989-10-01), Coldren et al.
patent: 4888781 (1989-12-01), Omura et al.
patent: 4937835 (1990-06-01), Omura
"AlGaAs MQW Laser with Electrodes on Epi-Layer," by Hirose et al., 18a-ZR-9 Prescripts of Autumn Meeting, 1987, Japanese Association of Applied Physics.
"AlGaAs/GaAs Lateral Current Injection MWQ Laser," by Makiuchi et al. Conference on Lasers and Electro-Optics, 1987.

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