Semiconductor laser

Details Semiconductor laser Semiconductor laser

1992-01-09

1993-05-25

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

052146634

ABSTRACT:
A semiconductor laser includes a p type cladding layer and an n type cladding layer sandwiching an active layer serially disposed on a semiconductor substrate. The p type cladding layer includes a first dopant impurity producing p type conductivity and a smaller quantity of a second impurity that produces n type conductivity and ionically bonds to the first impurity. The first and second dopant impurities attract each other and cannot move individually during a crystal growth step at high temperature whereby the diffusion of those impurities into the active layer is suppressed, preventing formation of a deep impurity level in the active layer, resulting in a semiconductor laser with a reduced threshold current.

REFERENCES:
patent: 4901326 (1990-02-01), Hayakawa et al.

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