Semiconductor laser

Details Semiconductor laser Semiconductor laser

1984-04-24

1987-01-27

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, 372704, H01S 319

Patent

active

046399259

ABSTRACT:
A semicondcutor laser comprises a semiconductor base structure provided with an etched channel, and a plurality of semiconductor layers laminated on the base structure by a liquid-phase epitaxial growth method and performing a laser function. The base structure includes a GaAs substrate of one conductivity type, a layer formed on the substrate for preventing deformation of the channel, and an oxidation-preventing layer formed on the channel deformation-preventing layer. A current-blocking layer consisting of GaAs of the opposite conductivity type may be formed between the GaAs substrate and the channel deformation-preventing layer. Further, another layer for preventing the channel deformation may be provided between the GaAs substrate and the current-blocking layer. In the invented semiconductor laser, the semiconductor layers are epitaxially grown sufficiently on the base structure, and the channel deformation can be sufficiently suppressed.

REFERENCES:
patent: 4532631 (1985-07-01), Shima et al.
Ishikawa et al, "Separated Multiclad-Layer Stripe-Geometry GaAlAs DH Laser", IEEE JQE vol. QE-17, No. 7, Jul. 1981, pp. 1226-1233.

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