Semiconductor laser

Details Semiconductor laser Semiconductor laser

1996-09-04

1999-08-03

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

059334436

ABSTRACT:
A semiconductor laser including a first conductive type of lower clad layer, active layer, a second conductive type of upper first clad layer, the first conductive type of current blocking layer having a stripe shaped open portion, and the second conductive type of upper second clad layer laminated in order on the first conductive type of GaAs substrate, wherein each portion in contact with the lower clad layer, the active layer, the upper first and second clad layer and at least the upper second clad layer of the current blocking layer is composed of a compound semiconductor to be represented by a formula, in which (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (x is 0<x.ltoreq.1 in the lower and upper first, second clad layers, 0.ltoreq.x<1 in the active layer, a given value y is approximately 0.5 for each layer) within of each range of 0<x.ltoreq.0.75 in the portion in contact with the upper second clad layer of the current blocking layer.

REFERENCES:
patent: 5144633 (1992-09-01), Ohnaka et al.
patent: 5146467 (1992-09-01), Kadowaki et al.
patent: 5386429 (1995-01-01), Naito et al.

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