Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-06-10

1999-08-03

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

059334428

ABSTRACT:
A p-type saturable light absorbing layer is provided between p-type AlGaInP clad layers. Oxygen is doped in the p-type saturable light absorbing layer to generate non-luminescent recombination center, thereby consuming minority carrier. By this, minority carrier life of the p-type saturable light absorbing layer is lowered without saturation. Therefore, saturable light absorbing amount necessary for self-pulsation can be reduced to achieve a semiconductor laser with low threshold value, low drive current and high reliability.

REFERENCES:
patent: 5214663 (1993-05-01), Kakimoto et al.
patent: 5416790 (1995-05-01), Yodoshi et al.
Ishikawa et al., "InGaAlP Transverse Mode Stabilized... Fabricated by MOCVD Selective Growth", Ext'd Abs of the 18th (1986 Int'l) Conf. on Solid State Devices and Materials, Tokyo, 1986, pp. 153-156, (no month available).
Preliminary Reports of 11th Semiconductor Laser Symposium (1994), p.21, (no month available).

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