Semiconductor laser

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 46, 372 48, H01S 319

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active

051366010

ABSTRACT:
A semiconductor laser having a stripe-like lasing region, wherein the structure of the lasing region such as the mechanism of optical guiding of the lateral mode control structure is made different between the central portion in the lasing region and portions close to facets, in order to reduce optical feedback induced noise and astigmatism, and to facilitate the manufacture thereof.

REFERENCES:
patent: 4360919 (1982-11-01), Fujiwara et al.
patent: 4404678 (1983-09-01), Aiki et al.
patent: 4594718 (1986-06-01), Scifres et al.
patent: 4606033 (1986-08-01), Sakamoto
patent: 4674094 (1987-06-01), Murakami
patent: 4682337 (1987-07-01), Amann
patent: 4691321 (1987-09-01), Motegi et al.
patent: 4694459 (1987-09-01), Burnham et al.
J. J. Coleman and P.D. Dapkus, Single-Longitudinal-Mode Metalorganic Chemical-Vapor-Deposition Self-Aligned GaAlAs-GaAs Double-Heterostructure Lasers, Aug. 1, 1980, pp. 262-263.
29p-M-4, Assoc. of the Applied Physics, 1984, pp. 172.
Appl. Phys. Lett. 40(4), Mar. 1, 1982, pp. 372-374.
Copy of English translation of 29p-M-4.

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