Semiconductor laser

Details Semiconductor laser Semiconductor laser

1990-08-24

1992-09-15

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

051484390

ABSTRACT:
In a semiconductor laser having a semi-insulating layer on the sides of a mesa to confine the current to the mesa during operation of the laser, at least one n-type layer and at least one p-type layer are provided above or below the semi-insulating layer.

REFERENCES:
patent: 4416012 (1983-11-01), Botez et al.
patent: 4426700 (1984-01-01), Hirao et al.
patent: 4779282 (1988-10-01), Ng
Patent Abstracts of Japan, Band 13, Nr. 38 (E-709), Jan. 27th, 1989; & JP-A-63 236 383 (Hitachi Ltd) Mar. 10, 1988.
Electronics Letters,, Band 22, Nr. 16, Jul. 1986, pp. 869-870, Stevenage, Herts, GB; D. P. Wilt et al.: "Channelled-substrate buried-. . . ".
Patent Abstracts of Japan, Band 10, Nr. 69 (E-389) [2126], Mar. 18th, 1986; & JP-A-60 217 688 (Hitachi Seisakusho K.K.) Oct. 31, 1985.
Appl. Phys. Lett. 48, Jun. 1986 "InGaAsP laser . . . " N. U. Dutta et al; pp. 15-2-15-3.
Japanese Journal of Applied Physics, Band 25, Nr. 6, part II, Jun. 1986, pp. L435-L436, Tokyo, JP; S. L. Shi et al.: "BH InGaAsp lasers . . . ".
Patent Abstracts of Japan, Band 9, Nr. 220 (E-341), Sep. 6th, 1985; & JP-A-60 080 292 (Matsushita Denki Sangyo K.K.) Aug. 5, 1985.
Applied Physics Letters, Band 40, Nr. 11, Jun. 1982, pp. 942-944, New York, U.S.; W. T. Tsang et al.: "A new lateral . . . ".

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