Semiconductor laser

Details Semiconductor laser Semiconductor laser

1994-07-15

1997-04-29

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 319

Patent

active

056256345

ABSTRACT:
A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current I.sub.th (A), a threshold voltage V.sub.th (V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance R.sub.S (Q) of the diode after the rising, a thermal resistance R.sub.t (K/W) and a characteristic temperature T.sub.0 (K). When two amounts .alpha. and .beta. are defined by:

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Applied Physics Letters, vol. 62, No. 20, May 17, 1993, "Blue-green Injection Lasers Containing Pseudomorphic . . . up to 394 K", Gaines et al, pp. 2462-2464.
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