Semiconductor laser

Coherent light generators – Particular resonant cavity – Distributed feedback

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372 44, 372 45, H01S 319

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active

047590300

ABSTRACT:
A semiconductor laser having high efficiency of luminescence can be obtained by forming a spatial fluctuation of potential so that the potential differs from position to position inside a plane perpendicular to a current flowing direction and electrons and holes or excitons formed by a combination of them can be localized not only in the current flowing direction but also inside the plane perpendicular to the current flowing direction. More definitely, corrugations or ruggedness having a mean pitch of below 100 nm and a level difference of from 1/10 to 1/2 of the mean thickness of an active layer are formed on the surface of the active layer of the semiconductor laser.

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Patent Abstracts of Japan, vol. 8, No. 268 (E-283), [1705], 7th Dec. 1984; JP-A-59-139691 (Nippon Denshin Denwa Kosha); 10-08-84.

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