Semiconductor laser

Details Semiconductor laser Semiconductor laser

1976-03-30

1977-07-05

Bauer, Edward S.

Oscillators

Molecular or particle resonant type

357 18, H01S 300

Patent

active

040343111

ABSTRACT:
Double-hetero-structure injection laser can be improved to have low threshold current in room-temperature continuous-wave operation. The improvement is obtained in one case wherein an n-type Ga.sub.1.sub.-y Al.sub.y As region (1.gtoreq.y>0) is first formed, a Ga.sub.1.sub.-z In.sub.z As is grown thereon as an active region and a p-type Ga.sub.1.sub.-y Al.sub.y As region is then formed on the active region and the value of z is so selected as to make the lattice constants of the active region smaller than those of the first and third regions.

REFERENCES:
patent: 3309553 (1967-03-01), Kroemer
patent: 3758875 (1973-09-01), Hayashi
patent: 3814993 (1974-06-01), Kennedy
patent: 3821777 (1974-06-01), James
patent: 3982261 (1976-12-01), Antypas
Milnes, et al., "Heterojunctions and Metal Semiconductor Junctions", Academic Pross., New York, pp. 7-9 & 142-148, 1972.

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