Semiconductor laser

Details Semiconductor laser Semiconductor laser

1987-11-10

1989-06-20

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 49, H01S 319

Patent

active

048415324

ABSTRACT:
A method for producing a semiconductor laser which comprises sequentially depositing a lower cladding layer, an active layer, and an upper cladding layer on a substrate, forming a V shaped groove in the deposited layers at least reaching the lower cladding layer, the groove extending in a direction perpendicular to the direction between the surfaces that are to become resonator end surfaces, growing a semiconductor layer having a larger energy band gap than that of the active layer in the groove while retaining the V shaped groove, and cleaving the substrate and layers along the V shaped groove.

REFERENCES:
patent: 4236296 (1980-12-01), Woolhouse et al.
patent: 4523316 (1985-06-01), Botez
"Optimum Design Conditions for AlGaAs Window Stripe Lasers", IEEE Journal of Quantum Electronics, vol. QE-17, No. 10, pp. 2113 to 2122.
"Large Optical Cavity AlGaAs Buried Heterostructure Window Lasers", Appl. Phys. Lett. 40(12), 1982, pp. 1029 to 1031.
"Nonabsorbing-Mirror (NAM) CDH-LOC Diode Lasers", Electronics Letters, vol. 20, No. 13, 1984, pp. 530 to 531.

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