Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-06-17

2000-02-22

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

060288744

ABSTRACT:
A III-V group semiconductor laser includes a first clad layer, a first optical waveguide layer, a first barrier layer, an active layer, a second barrier layer, a second optical waveguide layer and a second clad layer formed in this order on a GaAs substrate which is a III-V group compound semiconductor. Each of the first and second clad layers and the first and second optical waveguide layers is of a composition which matches with the GaAs substrate in lattice. The active layer is of a composition which induces compressive strain on the GaAs substrate. Each of the first and second barrier layers is of a composition which induces tensile strain on the GaAs substrate, thereby compensating for the compressive strain induced in the active layer. The ratio of V group elements contained in the first optical waveguide layer is the same as that in the first barrier layer, and the ratio of V group elements contained in the second optical waveguide layer is the same as that in the second barrier layer.

REFERENCES:
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patent: 5496767 (1996-03-01), Yoshida
patent: 5734671 (1998-03-01), Katsuyama
"Appl. Phys. Lett." 62(1993) 1644 (Apr.).
"IEEE Journal of Selected Topics in Quantum Electronics" vol. 1, No. 2(1995) p. 712 (Jun.).
"IEEE Journal of Quantum Electronics" QE-27(1991) p. 1483 (Jun.).
M. SAGAWA et al., "High-Power Highly-reliable Operation of 0.98-um InGaAs-InGaP Strain-Compensated Single-Quantum-Well Lasers with Tensile-Strained InGaAsP Barriers" IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, vol. 1, no. 2, 1 Jun. 1995, pps. 189-195.
G. ZHANG et al., "Strain-compensated inGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (0.98 um) grown by gas-source molecular beam epitaxy", APPLIED PHYSICS LETTERS, vol. 62, no. 14, 5 Apr. 1993, pp. 1644-1646.

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