Semiconductor laser

Details Semiconductor laser Semiconductor laser

2008-08-26

2010-11-16

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

07835413

ABSTRACT:
A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor layer and an n-type semiconductor layer that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5×1017cm−3or less near the pn junction.

REFERENCES:
patent: 5214662 (1993-05-01), Irikawa et al.
patent: 5218614 (1993-06-01), Mihashi
patent: 5281829 (1994-01-01), Chinen
patent: 5452315 (1995-09-01), Kimura et al.
patent: 5692002 (1997-11-01), Mizutani
patent: 5717710 (1998-02-01), Miyazaki et al.
patent: 5936990 (1999-08-01), Nakamura
patent: 7504664 (2009-03-01), Takiguchi
patent: 2003/0062517 (2003-04-01), Ryder et al.
patent: 2004/0213313 (2004-10-01), Akulova et al.
patent: 2005/0141578 (2005-06-01), Reid et al.
patent: 2008/0049805 (2008-02-01), Takiguchi et al.
patent: 05-013882 (1983-01-01), None
patent: 05-075214 (1993-03-01), None
patent: 07-022691 (1995-01-01), None
patent: 08-162701 (1996-06-01), None
patent: 08-255950 (1996-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4249942