Semiconductor laser

Coherent light generators – Particular resonant cavity – Specified cavity component

Reexamination Certificate

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C372S043010, C372S046015

Reexamination Certificate

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10637191

ABSTRACT:
A semiconductor laser has implantation regions that are effective as mode-selective regions in addition to current diaphragms in the edge region of a mesa. As a result, the inner opening of the current diaphragms can be chosen to be larger than in the prior art. This leads to a low ohmic and thermal resistance and enables a high output power.

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