Semiconductor laser

Details Semiconductor laser Semiconductor laser

2007-03-27

2007-03-27

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010, C372S046015, C372S046016

Reexamination Certificate

active

11070267

ABSTRACT:
In a semiconductor laser1, a current blocking layer19covers a p-type 2ndcladding layer17and a p-type cap layer18that extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end opposite the light-emission end, to thus form non-current injection regions in an optical waveguide. By making current blocking layer19at the light-emission end large enough that carriers flowing from a current injection region do not reach the light-emission end surface, the light intensity distribution in the near field at the light-emission end surface is strongly concentrated, allowing the horizontal divergence angle of an emerging laser beam to be enlarged. This structure makes it possible to enlarge the horizontal divergence angle independently after having optimized the thickness of cladding layers and the size of the current injection region.

REFERENCES:
patent: 5119387 (1992-06-01), Kinoshita
patent: 2003-78203 (2003-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3754655