Semiconductor laser

Details Semiconductor laser Semiconductor laser

2006-11-28

2006-11-28

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046012, C372S050100, C257S057000, C257S632000, C257S637000

Reexamination Certificate

active

07142576

ABSTRACT:
A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

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