Semiconductor laser

Details Semiconductor laser Semiconductor laser

1994-12-27

1997-06-03

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

257 18, H01S 319

Patent

active

056362366

ABSTRACT:
It is the object of the invention to provide a semiconductor laser with a low threshold lasing current and a high external differential quantum efficiency. A n-type AlGaInP clad layer 2, a AlGaInP MQW active layer 3, a p-type AlGaInP clad layer 4, p-type GaInP hetero-buffer layer 5 and a-type GaAs layer 6 are successively grown on a n-type GaAs substrate 1, wherein Al contents of a barrier in the MQW layer 3 is so varied that holes are uniformly distributed in each quantum well. Next, a mesa is formed by an etching process, then a n-type GaAs block layer 7 is grown, and electrodes are formed on both p and n-side surfaces. Finally, the processed substrate is cleaved, and laser diodes are obtained therefrom. An Al content of the barrier layer in the MQW active layer 3 is slowly decreased from a p-side to a n-side, and thereby holes are uniformly distributed in each quantum well and few electrons overflow a quantum well. The selected drawing is FIG. 6.

REFERENCES:
patent: 4839899 (1989-06-01), Burnham et al.
Y. Ueno et al., "30-mW 690-nm High-Power Strained-Quantum-Well AlGalnP Laser," IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 1851-1855.
S. Kawata et al., "Room-Temperature Continuous-Wave Operation of A 640 nm AlGalnP Visible-Light Semiconductor Laser," Electronics Letters, vol. 23, No. 24, Nov. 19, 1987, pp. 1327-1328.
P. J. Williams et al. "Effect of Barrier Width on Performance of Long Wavelength GalnAs/InP Multi-Quantum-Well Lasers" Electronics Letters, vol. 24, No. 14, Jul. 7, 1988, Stevenage, Great Britian, pp. 859-860.

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