Semiconductor laser

Details Semiconductor laser Semiconductor laser

1988-08-23

1989-09-19

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, H01S 319

Patent

active

048688371

ABSTRACT:
A semiconductor laser includes an active region which includes a portion having a refractive index distribution with a relatively samll refractive index difference which allows only the fundamental mode of the transverse modes in the neighborhood of the light output facet. The other region of the active region has a refractive index distribution with a large refractive index difference which allows the fundamental mode as well as higher order modes.

REFERENCES:
patent: 4674094 (1987-06-01), Murakami
patent: 4768200 (1988-08-01), Isshiki
"Transverse Mode Stabilized Al.sub.x Ga.sub.1-x As Injection Lasers with Channeled-Substrate-Planar Structure", Aiki et al, IEEE Journal of Quantum Electronics, vol. QE-14, No. 2, Feb. 1978, pp. 89-94.
"Visible GaAlAs V-Channeled Substrate Inner Stripe Laser with Stabilized Mode Using p-GaAs Substrate", Yamamoto et al, Applied Physics, Letters 40(5), Mar. 1982, pp. 372-374.

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