Semiconductor laser

Details Semiconductor laser Semiconductor laser

1994-10-19

1997-02-11

Bovernick, Rodney B.

Coherent light generators

Particular resonant cavity

Distributed feedback

372102, 372 45, H01S 308

Patent

active

056028660

ABSTRACT:
In a semiconductor laser, lower layers (an optical waveguide and a carrier blocking layer), which are exposed to air after they have been etched to form diffraction gratings until crystals are regrown, are formed of a five-element AlGaInAsP-based compound semiconductor material. Thus, a semiconductor laser is obtained which has a high yield and the oscillation wavelength range of 740-1000 nm and maintains a high reliability over a long period of time.

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patent: 5007107 (1991-04-01), Takiguchi et al.
patent: 5222090 (1993-06-01), Serreze
patent: 5303255 (1994-04-01), Kudo et al.
Waynant et al, Electro-optics Handbook, McGraw-Hill, Inc., 1994, p. 27.16.
"Gain-Coupled DFB Laser Diode Using Novel Absorptive Conduction-Type-Inverted Grating", Conference Digest on 13th IEEE International Semionductor Laser Conference, Sep. 21-25, 1992, pp. 14-15.

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