Semiconductor laser

Details Semiconductor laser Semiconductor laser

2011-07-05

2011-07-05

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S045010

Reexamination Certificate

active

07974323

ABSTRACT:
A semiconductor laser includes: a multiple quantum well active layer that is formed on a semiconductor substrate comprised by GaAs and includes well layers having GaInAsP that has a tensile strain against the GaAs, and a barrier layer having AlGaInP that has substantially zero strain against the GaAs, the well layers and the barrier layer being alternately stacked; a pair of first AlGaInP layers that has substantially zero strain against the GaAs, and is provided so that the first AlGaInP layers contact upper and lower surfaces of the multiple quantum well active layer respectively; and a pair of second AlGaInP layers that has a compressive strain against the GaAs, and is provided so that the second AlGaInP layers contact the pair of first AlGaInP layers respectively.

REFERENCES:
patent: 5363392 (1994-11-01), Kasukawa et al.
patent: 5-145178 (1993-06-01), None
patent: 7-111367 (1995-04-01), None
patent: 11-087764 (1999-03-01), None

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