Semiconductor laser

Details Semiconductor laser Semiconductor laser

1991-09-06

1993-02-09

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

051857553

ABSTRACT:
A semiconductor laser comprising an active waveguide formed of a compound semiconductor comprising a Group V element phosphorous, comprised of an active layer and two cladding layers that hold the active layer between them, and a current confinement structure formed on the active waveguide by the use of a compound semiconductor comprising Group V element arsenic. This semiconductor laser can achieve a small astigmatism, a low threshold current and a low operation current. Also disclosed is a method of fabricating a semiconductor laser having characteristic features that the crystal growth may be carried out only twice, the movement of the impurities in crystals does not easily occur, a regrowth interface with a very little defect can be readily obtained, and the structure wherein the outer cladding layer has a smaller width at its portion nearer to the active waveguide can be naturally formed.

REFERENCES:
patent: 5036521 (1991-07-01), Hatakoshi et al.
patent: 5058120 (1991-10-01), Nitta et al.
"Visible-Light" by Genichi Hatakoshi et al. Kogaku (Optics), vol. 19, pp. 362-368, 1990.

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