Coherent light generators – Particular active media – Semiconductor
Patent
1981-06-01
1984-01-31
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, H01S 319
Patent
active
044293950
ABSTRACT:
A semiconductor laser includes a body having parallel end faces and a substrate having a ridge in a major surface thereof which extends between the end surfaces, an active layer overlying the ridge and which tapers in thickness from that portion of the active layer which overlies the ridge and a confinement layer overlying the active layer. The invention also includes a method of forming a semiconductor laser which includes a substrate having a ridge thereon. The method includes the steps of coating a portion of a flat surface of the substrate with an etch resistant material, etching the surface with an anisotropic etchant thereby forming a mesa therein, removing the etch resistant material, further etching the substrate to round the mesa to form a ridge and depositing the active and confinement layers over the surface and the ridge.
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Pearsall et al., "Efficient Lattice-Matched Double-Heterostructure LED's at 1.1 .mu.m from Ga.sub.x In.sub.1-x AsyP.sub.1-y, "APL, vol. 28, No. 9, May 1976, pp. 499-501.
G. H. Olsen et al., Journal of Electronic Matls., vol. 9, No. 6, 1980 InGaAsP Quaternary Alloys: Composition, Refractive Index and Lattice Mismatch.
Olsen Gregory H.
Zamerowski Thomas J.
Burke William J.
Cohen Donald S.
Davie James W.
Morris Birgit E.
RCA Corporation
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