Semiconductor laser

Details Semiconductor laser Semiconductor laser

1991-03-26

1992-03-10

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

050954881

ABSTRACT:
A semiconductor laser formed into a double hetero junction structure comprising an n-type cladding layer and a p-type cladding layer with an active layer interposed therebetween. The p-type cladding layer has a laminated structure consisting of a first cladding layer of (Al.sub.x Ga.sub.1-x)InP disposed on one side adjacent to the active layer and a second cladding layer of Al.sub.y Ga.sub.1-y As disposed on the reverse side. A deterioration prevention layer of Al.sub.z Ga.sub.1-y As is included in the first cladding layer at a position spaced apart from the second cladding layer by a predetermined thickness. In addition, the second cladding layer is partially removed, and a current stricture layer is formed at the removed portion. Due to the above design, the semiconductor layer is capable of retaining high reliability with certainty.

Affiliated with

Also associated with

Rating

Semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2290114