Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-08-29

1999-07-13

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

059236884

ABSTRACT:
A semiconductor laser is herein disclosed which comprises an active layer 21 and SCH layers which sandwich the active layer 21 from upper and lower sides, wherein the SCH layer comprises a multi-layer structure of 2 or more layers 22,24,23,25, and this multi-layer structure is constituted so that the band gaps of the respective layers may increase as the multi-layer structure is apart from the active layer.

REFERENCES:
patent: 5509026 (1996-04-01), Sasaki et al.
patent: 5753933 (1998-05-01), Morimoto
Yamashita, S. et al., "Low-Threshold (3.2 mA per Element) 1.3 .beta.m InGaAsP MQW Laser Array on a p-Type Substrate", IEEE Photonics Technology Letters, vol. 4, No. 9, Sep. 1992, pp. 954-957.

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