Semiconductor laser

Details Semiconductor laser Semiconductor laser

1981-05-22

1984-06-26

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, 357 17, H01S 319

Patent

active

044569980

ABSTRACT:
A semiconductor laser, which comprises a substrate of InP, an active layer, and two clad layers holding therebetween the active layer, and which is constructed so that the refractive index of the active layer may be larger than the refractive indexes of the two clad layers. In one of the two clad layers, the refractive index of a region adjacent to a radiation region in the active layer is larger than the refractive index of a region adjacent to a non-radiation region in the active layer. The refractive index of the other clad layer is equal to the refractive index of that region of said on clad layer adjoining the radiation region or the non-radiation region. The thickness and width of the radiation region of the active layer are selected so that the semiconductor laser may oscillate in the fundamental transverse mode. A buffer layer may be further provided between the active layer and one of the two clad layers.

REFERENCES:
patent: 4329660 (1982-05-01), Yano et al.
patent: 4340966 (1982-07-01), Akiba et al.

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