Semiconductor laser

Details Semiconductor laser Semiconductor laser

1987-06-17

1988-12-13

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

047916478

ABSTRACT:
An improved semiconductor laser comprises the first and second cladding portions respectively formed on a semi-insulating substrate, an active region sandwiched between the first and second cladding portions, and the first and second electrodes respectively provided on the first and second cladding portions. The first cladding portion includes a semiconductor layer and semi-insulating semiconductor layers provided on the top and back sides of the semiconductor layer so that carries are injected into an active region which is in contact with the side wall of the semiconductor layer, while current leakage is prevented from being produced because the carrier are not injected into other portion than the active region. An improved process of the fabrication of a semiconductor laser comprises forming the first cladding portion to have a vertical side wall from which a side wall of a semiconductor layer is exposed so that an active region is easily formed to be in contact with the side wall of the semiconductor layer.

REFERENCES:
patent: 4166278 (1979-08-01), Susaki et al.
Lee et al, "GaAs-GaAlAs Injection Lasers on Semi-Insulating Substrates Using Laterally Diffused Junctions", Appl. Phys. Lett. 32(7), 1 Apr. 1978, pp. 410-412.

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