Semiconductor laser

Details Semiconductor laser Semiconductor laser

1983-06-06

1986-03-11

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

045758522

ABSTRACT:
A p-type semiconductor layer and an active layer and an n-type semiconductor layer are laminated in this order onto an n-type semiconductor layer. The n-type semiconductor layer is provided with an electron injection electrode on its upper part and a narrow current path is formed in its interior with the inversion diffusion layers. A positive hole injection electrode is provided on the p-type semiconductor layer. The direction of taking out the positive hole injection layer is the same as that of the electron injection electrode.

REFERENCES:
patent: 4288757 (1981-09-01), Kajimura et al.
patent: 4316208 (1982-02-01), Kobayashi et al.

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