Coherent light generators – Particular active media – Semiconductor
Patent
1994-03-17
1995-04-18
Epps, Georgia
Coherent light generators
Particular active media
Semiconductor
372 46, H01S 319
Patent
active
054084873
ABSTRACT:
A group III-V compound semiconductor laser of a 1 .mu.m band having an excellent conversion efficiency and a high characteristic temperature. The semiconductor laser can emit light in a 1.3 .mu.m band or a 1.55 .mu.m, and has a laser structure including an active layer For emitting light, guide layers sandwiching the active layer and having a band gap larger than the active layer, and clad layers embracing the guide layers and having a band gap larger than the guide layers. The lattice constants of the guide layers and clad layers are larger than a1 by 0.5% or more and smaller than a2 by 0.5% or more, where a1 represents the lattice constant of GaAs and a2 is the lattice constant of InP.
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Japanese Journal of Applied Physics, May 1992, Kasukawa et al., 31:1365-1371 1.5 .mu.m GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition.
Applied Physics Letter, Oct.1989, Melman et al., 55:1436-1438 InGaAs/GaAs strained quantum wells with a 1.3 mum band edge at room temperature.
Applied Physics Letter, Nov. 1991, Roan et al., 59:2688-2690 Long wavelength 1.3 mum luminescence in INGAAs strained well structures grown on GaAs.
Anayama Chikashi
Kurakake Hirohide
Kuramata Akito
Soda Haruhisa
Uchida Toru
Epps Georgia
Fujitsu Limited
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