Semiconductor laminating structure

Details Semiconductor laminating structure Semiconductor laminating structure

1997-04-18

1999-11-09

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 94, 257194, 257280, 257627, H01L 3300

Patent

active

059819804

ABSTRACT:
To provide a semiconductor laminating structure in which an epitaxial growth of a GaN system material is achieved on a substrate with an excellent matching property with the substrate. The semiconductor laminating structure includes the substrate having a perovskite structure and at least one GaN system chemical compound semiconductor layer formed on the substrate, wherein a major surface of the substrate is formed of a (111) crystal surface.

REFERENCES:
patent: 5716450 (1998-02-01), Togawa et al.

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