Semiconductor junction formation by directed heat

Details Semiconductor junction formation by directed heat Semiconductor junction formation by directed heat

1986-03-24

1988-03-08

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG4, 148DIG93, 437 16, 437173, 437942, H01L 21265

Patent

active

047299622

ABSTRACT:
The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.

REFERENCES:
patent: 3940289 (1976-02-01), Marquardt
patent: 4273950 (1981-06-01), Chitre
patent: 4443493 (1984-04-01), Delfino
patent: 4482393 (1984-11-01), Nishiyama et al.
patent: 4514440 (1985-04-01), Justice et al.
patent: 4539431 (1985-09-01), Moddel et al.
patent: 4619036 (1986-10-01), Havemann et al.
patent: 4621411 (1986-11-01), Havemann et al.
USAMI et al., 18th Photovoltiaic . . . Conf., Las Vegas, Nevada, Oct. 1985.
Kato et al., Jour. Electrochem. Soc. (Jul. 1985), p. 1730.
Sedwick, Jour. Electrochem. Soc. 130 (1983), 484.

Affiliated with

Also associated with

Rating

Semiconductor junction formation by directed heat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor junction formation by directed heat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor junction formation by directed heat will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-231282