Semiconductor junction capacitance element with breakdown voltag

Details Semiconductor junction capacitance element with breakdown voltag Semiconductor junction capacitance element with breakdown voltag

1992-11-05

1993-07-06

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Voltage variable capacitance device

257487, H01L 2992

Patent

active

052257088

ABSTRACT:
An semiconductor junction capacitance element equipped with the function of preventing electrostatic breakdown is disclosed in which a main PN junction adapted to serve as variable capacitance diode is defined in an epitaxial layer of a first conductivity type. A diffusion layer of the first conductivity type is provided in the epitaxial layer at a position spaced apart from a lateral PN junction which is exposed at major surface of the epitaxial layer so that the breakdown voltage of the lateral PN junction is set up to be lower than the breakdown voltage of the main PN junction by virtue of the provision of the diffusion layer.

REFERENCES:
patent: 4475117 (1984-10-01), Raabe

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