Semiconductor isolation process to minimize weak oxide problems

Details Semiconductor isolation process to minimize weak oxide problems Semiconductor isolation process to minimize weak oxide problems

1997-12-12

1999-12-14

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257506, 257510, 257639, 257649, 257410, 257411, H01L 2900, H01L 2358, H01L 2976

Patent

active

060021608

ABSTRACT:
A semiconductor isolation structure comprising: a semiconductor substrate with a plurality of trenches formed therein with substantially vertical sidewalls, the plurality of trenches defining at least one mesa of semiconductor material; wherein only top corners of the mesa have been converted to an oxide containing a heavy ion implant; and an insulator material filling the plurality of trenches.

REFERENCES:
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5084071 (1992-01-01), Nenadic et al.
patent: 5410176 (1995-04-01), Liou et al.
patent: 5498891 (1996-03-01), Sato
patent: 5668403 (1997-09-01), Kunikiyo

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