Semiconductor inverter layout having improved electromigration c

Details Semiconductor inverter layout having improved electromigration c Semiconductor inverter layout having improved electromigration c

1994-12-16

1996-07-02

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

257767, 257773, 257909, 257919, 257923, 257369, H01L 2906

Patent

active

055325092

ABSTRACT:
A particular layout (38) of transistors along a continuous conductor line (54), such as the transistors in a CMOS inverter, has been found which reduces breaks or voids in the conductor line due to electromigration of the conductor atoms from predominantly unidirectional current flows. The conductor line may be a metal line. By alternating the two types of transistors, p- and n-type (40, 41, 46 & 47), along the length of the metal line, almost the entire length of the line can be changed to one with bidirectional current flow which significantly reduces the mean-time-to-failure for electromigration-related damage. The layout arrangement will find greater advantage for large transistors, long metal lines, relatively large unidirectional current flows and devices that run at high frequency, such as clock drivers.

REFERENCES:
patent: 5365110 (1994-11-01), Matsuoka

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