Semiconductor intergrated circuit with MOS transistors compensat

Details Semiconductor intergrated circuit with MOS transistors compensat Semiconductor intergrated circuit with MOS transistors compensat

1997-05-20

1998-09-01

Wambach, Margaret Rose

Miscellaneous active electrical nonlinear devices, circuits, and

Specific input to output function

With compensation

327332, 327379, 327534, G06G 712

Patent

active

058015701

ABSTRACT:
A plurality of MOS transistors connected to each other at a substrate electrode thereof to have a substrate potential are deviation-compensated by a combination of a power source having a power source potential independent from the substrate potential, a power supply line connected to a source electrode of each of the MOS transistors, a sample circuit composed of a sampled one of the MOS transistors, detection circuitry for detecting an action of the sample circuit to provide a detection signal representing a difference between the detected action of the sample circuit and a reference action therefor, and a voltage generator connected between the power source and the power supply line, the voltage generator generating a voltage depending on the detection signal.

REFERENCES:
patent: 5397934 (1995-03-01), Merrill et al.
patent: 5459426 (1995-10-01), Hori
patent: 5475325 (1995-12-01), Nezu
patent: 5633825 (1997-05-01), Sakuta et al.
Kobayashi et al., "Self-adjusting threshold-voltage scheme for low-voltage high speed operation", IEEE 1994 Custom Integrated Circuits Conference pp. 271-274, Feb. 1994.

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